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HIVE INF
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ARCHIVE INFORMATION
MRF19045LR3 MRF19045LSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
5
10
15
20
25
30
35
1900 1930 1960 1990 2020
?60
?50
?40
?30
?20
?10
0
Figure 3. 2-Carrier N-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain, IRL
and Drain Efficiency versus Output Power
Figure 5. 2-Carrier N-CDMA IM3
versus Output Power
Pout, OUTPUT POWER (WATTS) (Avg. 2?Carrier N?CDMA)
Figure 6. 2-Carrier N-CDMA ACPR
versus Output Power
13.5
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
G
ps
, POWER GAIN (dB) IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
, DRAIN EFFICIENCY (%),
η
G
ps
, POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS) (Avg. 2?Carrier N?CDMA)
IM3 (dBc), ACPR (dBc)
0
5
10
15
20
25
30
35
40
123456789101112
?70
?65
?60
?55
?50
?45
?40
?35
?30
η
Gps
ACPR
IM3
η
Gps
ACPR
IM3
IRL
f, FREQUENCY (MHz)
IM3 (dBc), ACPR (dBc), IRL (dB)
, DRAIN EFFICIENCY (%),
η
G
ps
, POWER GAIN (dB)
?55
?50
?45
?40
?35
?30
01 9101112234 5678
350 mA
450 mA
700 mA
550 mA
VDD
= 26 Vdc
IDQ
= 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
Pout, OUTPUT POWER (WATTS) (Avg. 2?Carrier N?CDMA)
01 9101112234 5678
?70
?55
?65
?60
?50
?45
Figure 7. 2-Carrier N-CDMA Power Gain
versus Output Power
Pout, OUTPUT POWER (WATTS) (Avg. 2?Carrier N?CDMA)
350 mA
450 mA
700 mA
550 mA
01 9101112234 5678
350 mA
450 mA
700 mA
550 mA
14.0
14.5
15.0
15.5
VDD
= 26 Vdc
IDQ
= 450 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01%)
VDD
= 26 Vdc, I
DQ
= 550 mA 2.5 MHz Carrier Spacing
1.2288 MHz Source Channel Bandwidth
9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01%)
VDD
= 26 Vdc
IDQ
= 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01%
Probability) (CCDF)
VDD
= 26 Vdc, I
DQ
= 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01% Probability) (CCDF)
Figure 8. CW Output Power, Power Gain and Drain
Efficiency versus Input Power
0
10
20
30
40
50
60
70
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
10
11
12
13
14
15
16
17
Gps
η
Pout
P1dB
P3dB
Pin, INPUT POWER (WATTS CW)
, DRAIN EFFICIENCY (%),
η
P , OUTPUT POWER (WATTS CW)
out
G
ps
, POWER GAIN (dB)
VDD
= 26 Vdc
IDQ
= 550 mA
f = 1960 MHz
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